In order to improve product quality and reliability, Yixing is equipped with FA failure analysis laboratory to find out defects in product design and manufacturing process through in-depth analysis of failure causes, so as to guide enterprises to improve production process and optimize product design, which can not only reduce the failure rate of products, but also extend the service life of products and improve user experience. In addition to routine testing, we also provide customized test programs and solutions, test design according to the specific needs of customers, and provide professional test reports and recommendations to help customers evaluate and improve the reliability and stability of their products.

FA分析流程

Equipment principle introduction

Emmi(Low Light Microscope)

In the process of IC fault analysis, EMMI(also known as PEM, Photon mission Microscope) is a very basic and commonly used fault location tool, the traditional EMMI is a cooled charge-coupled element (C-CCD is an integrated circuit, there are many aligned capacitors, can sense light, And turn the images into digital signals.) To detect photons.

The situation in which no photon is detected

Ohmic contact

Metal interconnection short circuit; Surface inversion layer;

Bright spots are obscured;

Principle of InGaAs device

The detection principle of InGaAsEMMI is the same as that of traditional EMMI (Si CCD), which detects the electron-hole bond and the hot carrier (under the action of strong electric field, the average kinetic energy of the charge carrier in the semiconductor significantly exceeds the average kinetic energy of the heat balance carrier). InGaAs can detect a longer wavelength, and the detection sensitivity is higher than CCD EMMI.

Detectable defects:

1. P-N junction/gate oxide leakage

2. Destruction of residual polycrystalline silicon filament/silicon substrate

3. Burned components, etc

The situation in which no photon is detected

1. The bright spot is shielded – buried diode and metal leakage point

2. Ohmic contact short circuit and metal connection short circuit

3. Too small leakage (<0.1uA)

OBIRCH machine principle

R-Obirch is the laser beam induced resistance change anomaly test, the principle is to use a laser scanning IC with a wavelength of 1340nm, causing the scanning point to be locally heated, in the case of giving a DC constant voltage, any material or operating components will change resistance due to temperature changes, so the current will also change.

Types of defects OBIRCH can analyze:

1. Metal short circuit or metal bridge

2. Grid oxide nail holes

3. Short circuit in the active zone

4. Polycrystalline short circuit or contact pore

5. Trap short circuit or source/drain short circuit

6. Resistance failure in the upper through hole/contact hole/metal/polycrystalline/active area

7. Any short circuit, bridge, bridge with different material or thickness

8. Leakage or high impedance IC failure situation

THEMOS machine principle

THEMOS ELET is a heat microscope equipped with a high sensitivity camera to detect the internal heat of semiconductor devices. By superimposing the heat map detected by the high-precision thermal detector and the template image, the failure location can be identified with high precision.

Ion grinding system

Optimized slice surface;

Ion polishing width 8mm

There are two polishing modes: cross-section and plane

Failure analysis specific process

In addition to our own FA failure analysis laboratory, we also have a long-term cooperation with Shanghai Jifeng, a professional testing company, to conduct a comprehensive and in-depth analysis of the failure devices from multiple angles and using a variety of technical means to provide customers with more professional services.